The bias-annealing effect on a-Si:H photodiode
- Author
- ICHINOSE, H1 ; ISHIZUKA, Y1 ; NOZAKI, H1 ; FURUKAWA, A1 ; TANGO, H1 ; YOSHIDA, O1
[1] ULSI Research Laboratory, Toshiba Corporation. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan - Conference title
- Amorphous semiconductors - Science and technology
- Conference name
- ICAS 16: International Conference on Amorphous Semiconductors - Science and Technology (16 ; Kobe 1995-09-04)
- Author (monograph)
- SHIMIZU, Tatsuo (Editor)1 ; YONEZAWA, Fumiko (Editor); NITTA, Shoji (Editor); SHIMIZU, Isamu (Editor)
International Union of Pure and Applied physics IUPAP, Göteborg, Sweden (Funder/Sponsor)
Japan Society of Applied Physics JSAP, Japan (Funder/Sponsor)
Commemorative Association of the Japan World Exposition (1970), Japan (Funder/Sponsor)
Kobe City, Kobe, Japan (Funder/Sponsor)
New Energy and Industry Technology Development Organization NEDO, International (Funder/Sponsor)
Ministry of International Trade and Industry MITI ; AIST ; New Sunshine Project Organization, Tokyo, Japan (Funder/Sponsor)
Kansai Research Foundation for Technology Promotion, Japan (Funder/Sponsor)
Murata Science Foundation, Japan (Funder/Sponsor)
[1] Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Japan - Source
Journal of non-crystalline solids. 1996, Vol 198200, pp 322-325 ; 1 ; ref : 14 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Etude expérimentale Matériau amorphe Photodiode Recuit thermique Silicium
- Keyword (en)
- Experimental study Amorphous material Photodiode Thermal annealing Silicon
- Keyword (es)
- Estudio experimental Material amorfo Fotodiodo Recocido térmico Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3222961
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-3093(96)00156-1 
https://dx.doi.org/10.1016/0022-3093(96)00156-1
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