Pressure and temperature dependent carrier mobility in a quantum well wire with polaronic effects
- Author
- JAYAM, S. G1 ; NAVANEETHAKRISHNAN, K2
[1] Physics Department, Holy Cross College, Nagercoil 629 004, India
[2] School of Physics, Madurai Kamaraj University, Palkalainagar, Madurai 625 021, India - Source
Physica status solidi. A. Applied research. 1996, Vol 157, Num 1, pp 107-114 ; ref : 18 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Dépendance température Effet pression Etude théorique Fil quantique Fonction diélectrique Gallium arséniure Matériau semiconducteur Mobilité porteur charge Polaron As Ga GaAs
- Keyword (en)
- Inorganic compounds Temperature dependence Pressure effects Theoretical study Quantum wires Dielectric function Gallium arsenides Semiconductor materials Carrier mobility Polarons
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40K Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61E Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3224824
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211570114 
https://dx.doi.org/10.1002/pssa.2211570114
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