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Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells

Author
FROMHERZ, T1 ; KRUCK, P1 ; HELM, M1 ; BAUER, G1 ; NÜTZEL, J. F2 ; ABSTREITER, G2
[1] Institut für Halbleiterphysik, Universität Linz, 4040 Linz, Austria
[2] Walter Schottky Institut, TU München, 85784 Garching, Germany
Source

Superlattices and microstructures. 1996, Vol 20, Num 2, pp 237-243 ; ref : 15 ref

CODEN
SUMIEK
ISSN
0749-6036
Scientific domain
Electronics; Condensed state physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Composé binaire Etude expérimentale Force oscillateur Germanium composé Matériau semiconducteur Photoconductivité Polarisation Puits quantique Relation dispersion Silicium composé Silicium Sous bande Spectre IR Spectre absorption Transition interbande Transition niveau énergie Ge Si Si SiGe Composé minéral
Keyword (en)
Binary compounds Experimental study Oscillator strengths Germanium compounds Semiconductor materials Photoconductivity Polarization Quantum wells Dispersion relations Silicon compounds Silicon Subband Infrared spectra Absorption spectra Interband transitions Energy-level transitions Inorganic compounds
Keyword (es)
Subbanda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66D Elemental semiconductors and insulators

Pacs
7866D Elemental semiconductors and insulators

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3227834

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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