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Morphological transition of Sn particles on Si substrate induced by ion irradiation

Author
TAKAHIRO, K1 ; SUGAWARA, M1 ; NAGATA, S1 ; YAMAGUCHI, S1
[1] Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
Conference title
International Conference on Surface Modification of Metals by Ion Beams (SMMIB)
Conference name
International Conference on Surface Modification of Metals by Ion Beams (SMMIB) (SMMIB) (9 ; San Sebastian 1995-09-04)
Author (monograph)
ONATE, J. I (Editor)1 ; SARTWELL, B. D (Editor); GUZMAN, L (Editor)2
INASMET, San Sebastian, Spain (Funder/Sponsor)
[1] ISNASMET, San Sebastian, Spain
[2] CMBM, Trento, Italy
Source

Surface & coatings technology. 1996, Vol 83, Num 1-3, pp 99-102 ; ref : 9 ref

CODEN
SCTEEJ
ISSN
0257-8972
Scientific domain
General chemistry, physical chemistry; Metallurgy, welding
Publisher
Elsevier, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Amorphisation Couche mince Dépôt phase vapeur Etain Etude expérimentale Evaporation Interface Irradiation ion Irradiation Morphologie Mouillage Rétrodiffusion Rutherford SEM Silicium
Keyword (en)
Amorphization Thin films Vapor deposition Tin Experimental study Evaporation Interfaces Ion irradiation Irradiation Morphology Wetting Rutherford backscattering SEM Silicon
Keyword (es)
Depósito fase vapor Irradiación ión Retrodifusión Rutherford
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc

Pacs
6855L Defects and impurities: doping, implantation, distribution, concentration, etc

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3228444

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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