Infrared spectroscopy in p-type SiGe/Si quantum wells
- Author
- BERROIR, J. M1 ; ZANIER, S1 ; GULDNER, Y1 ; VIEREN, J. P1 ; SAGNES, I2 ; CAMPIDELLI, Y2 ; BADOZ, P. A2
[1] Laboratoire de Physique de la Matière Condensée, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
[2] CNET-CNS, France Telecom, BP 98, 38243 Meylan, France - Conference title
- ISSH International Symposium on Si Heterostructures: From Physics to Devices
- Conference name
- ISSH International Symposium on Si Heterostructures: From Physics to Devices (Heraklion, Crete 1995-09-11)
- Author (monograph)
- LAGOMARSINO, S (Editor)1 ; DERRIEN, J (Editor)2 ; KELIRES, P (Editor)3
[1] IESS, CNR, Rome, Italy
[2] CRMC2, CNRS, Marseille, France
[3] University Crete and FORTH, Crete, Greece - Source
Applied surface science. 1996, Vol 102, pp 331-335 ; ref : 14 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Alliage binaire Alliage semiconducteur Etude expérimentale Germanium alliage Modèle Drude Porteur libre Puits quantique Silicium alliage Silicium Sous bande Spectre IR Spectre absorption Transition interbande Transition niveau énergie Ge Si Si SiGe
- Keyword (en)
- Binary alloys Semiconductor alloys Experimental study Germanium alloys Drude model Free carrier Quantum wells Silicon alloys Silicon Subband Infrared spectra Absorption spectra Interband transitions Energy-level transitions
- Keyword (es)
- Portador libre Subbanda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30A Elemental semiconductors and insulators
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66D Elemental semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3236191
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/0169-4332(96)00074-8 
https://dx.doi.org/10.1016/0169-4332(96)00074-8
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:3:\"102\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"331\";s:8:\"\u0000*\u0000epage\";s:3:\"335\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"BERROIR\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"ZANIER, S\";i:1;s:10:\"GULDNER, Y\";i:2;s:12:\"VIEREN, J. P\";i:3;s:9:\"SAGNES, I\";i:4;s:13:\"CAMPIDELLI, Y\";i:5;s:11:\"BADOZ, P. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"ISSH International Symposium on Si Heterostructures: From Physics to Devices\";s:8:\"\u0000*\u0000title\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:3:\"102\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"331\";s:8:\"\u0000*\u0000epage\";s:3:\"335\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"BERROIR\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"ZANIER, S\";i:1;s:10:\"GULDNER, Y\";i:2;s:12:\"VIEREN, J. P\";i:3;s:9:\"SAGNES, I\";i:4;s:13:\"CAMPIDELLI, Y\";i:5;s:11:\"BADOZ, P. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"ISSH International Symposium on Si Heterostructures: From Physics to Devices\";s:8:\"\u0000*\u0000title\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:3:\"102\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"331\";s:8:\"\u0000*\u0000epage\";s:3:\"335\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"BERROIR\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"ZANIER, S\";i:1;s:10:\"GULDNER, Y\";i:2;s:12:\"VIEREN, J. P\";i:3;s:9:\"SAGNES, I\";i:4;s:13:\"CAMPIDELLI, Y\";i:5;s:11:\"BADOZ, P. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"ISSH International Symposium on Si Heterostructures: From Physics to Devices\";s:8:\"\u0000*\u0000title\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:3:\"102\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"331\";s:8:\"\u0000*\u0000epage\";s:3:\"335\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"BERROIR\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"ZANIER, S\";i:1;s:10:\"GULDNER, Y\";i:2;s:12:\"VIEREN, J. P\";i:3;s:9:\"SAGNES, I\";i:4;s:13:\"CAMPIDELLI, Y\";i:5;s:11:\"BADOZ, P. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"ISSH International Symposium on Si Heterostructures: From Physics to Devices\";s:8:\"\u0000*\u0000title\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0169-4332(96)00074-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:3:\"102\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"331\";s:8:\"\u0000*\u0000epage\";s:3:\"335\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"BERROIR\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:9:\"ZANIER, S\";i:1;s:10:\"GULDNER, Y\";i:2;s:12:\"VIEREN, J. P\";i:3;s:9:\"SAGNES, I\";i:4;s:13:\"CAMPIDELLI, Y\";i:5;s:11:\"BADOZ, P. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"ISSH International Symposium on Si Heterostructures: From Physics to Devices\";s:8:\"\u0000*\u0000title\";s:53:\"Infrared spectroscopy in p-type SiGe\/Si quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
