Preparation and characterization of AgGaS2 thin films by vacuum evaporation
- Author
- KURASAWA, M1 ; KOBAYASHI, S1 ; KANEKO, F1 ; OISHI, K2 ; OHTA, S.-I3
[1] Faculty of Engineering, Niigata University, 8050, 2-no-cho, Ikarashi, Niigata 950-21, Japan
[2] Graduate School of Science and Technology, Niigata University, 8050, 2-no-cho, Ikarashi, Niigata 950-21, Japan
[3] R&D Center, Nippon Seiki Co. Ltd., 1-190-1, Fujihashi, Nagaoka 940-21, Japan - Source
Journal of crystal growth. 1996, Vol 167, Num 1-2, pp 151-156 ; ref : 6 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Argent sulfure Caractérisation Composé ternaire Couche mince Croissance cristalline en phase vapeur Epitaxie Etude expérimentale Evaporation sous vide Gallium sulfure Mode opératoire Non stoechiométrie Orientation cristalline Ag Ga S AgGaS2 Composé minéral Métal transition composé
- Keyword (en)
- Silver sulfides Characterization Ternary compounds Thin films Crystal growth from vapors Epitaxy Experimental study Vacuum evaporation Gallium sulfides Operating mode Nonstoichiometry Crystal orientation Inorganic compounds Transition element compounds
- Keyword (es)
- Caracterización Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15E Vacuum deposition
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3248725
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(96)00147-9 
https://dx.doi.org/10.1016/0022-0248(96)00147-9
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