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Adhesion improvement of photoresist on TiN/Al multilayer by ozone treatment

Author
WAKAMIYA, W1 ; HIRAYAMA, M1 ; YASUOKA, A1 ; KAWAI, A2
[1] ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
[2] Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-21, Japan
Source

Japanese journal of applied physics. 1996, Vol 35, Num 9B, pp L1227-L1229 ; 2 ; ref : 9 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Adhérence Aluminium Composé binaire Essai arrachement Etude expérimentale Fabrication microélectronique Force adhérence Multicouche Ozone Photorésist Titane Nitrure N Ti TiN
Keyword (en)
Adhesion Aluminium Binary compound Peeling test Experimental study Microelectronic fabrication Adhesive strength Multiple layer Ozone Photoresist Titanium Nitrides
Keyword (es)
Adherencia Aluminio Compuesto binario Prueba desgarradura Estudio experimental Fabricación microeléctrica Fuerza adherencia Capa múltiple Ozono Fotorresistente Titanio Nitruro
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3259505

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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