Positive and negative charge creation in the SiO2 film of a MOS transistor by high electric field stress
- Author
- STRZALKOWSKI, I1 ; KOWALSKI, M1
[1] Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland - Source
Applied physics. A, Materials science & processing (Print). 1996, Vol 63, Num 2, pp 179-182 ; ref : 23 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ intense Composé binaire Couche oxyde Effet champ électrique Etude expérimentale Génération porteur charge Silicium Oxyde Transistor MOS Transistor effet champ O Si SiO2
- Keyword (en)
- High field Binary compound Oxide layer Electric field effect Experimental study Charge carrier generation Silicon Oxides MOS transistor Field effect transistor
- Keyword (es)
- Campo intenso Compuesto binario Capa óxido Efecto campo eléctrico Estudio experimental Generación portador carga Silicio Óxido Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3263860
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF01567647 
https://dx.doi.org/10.1007/BF01567647
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