Investigation of high quality GaAs:In layers grown by liquid phase epitaxy
- Author
- MILANOVA, M; CHOLAKOVA, T; BEDIKJAN, L; STANEV, N
Inst. applied physics, 4000 Plovdiv, Bulgaria - Source
Journal of electronic materials. 1994, Vol 23, Num 11, pp 1235-1237 ; ref : 9 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition indium Composé binaire Concentration impureté Croissance cristalline en solution Densité porteur charge Dopage cristal Etude expérimentale Gallium arséniure LPE Matériau semiconducteur Mobilité porteur charge Photoluminescence Structure cristalline As Ga GaAs:In Composé minéral
- Keyword (en)
- Indium additions Binary compounds Impurity density Crystal growth from solutions Carrier density Crystal doping Experimental study Gallium arsenides LPE Semiconductor materials Carrier mobility Photoluminescence Crystal structure Inorganic compounds
- Keyword (es)
- Concentración impureza
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3321443
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02649975 
https://dx.doi.org/10.1007/BF02649975
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