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Light and temperature effect on pin a-Si:H device performance

Author
VIEIRA, M; FORTUNATO, E; LAVAREDA, G; CARVALHO, C. N; MARTINS, R
FCT-UNL/UNINOVA, 2825 Monte da Caparica, Portugal
Conference title
ETCHC-1 : European topical conference on hard coatings
Conference name
ETCHC-1 : European topical conference on hard coatings (1 ; Alicante 1993-07-12) = Iberian vacuum meeting (2 ; Alicante 1993-07-12)
Author (monograph)
DE SEGOVIA, José L (Editor)1 ; LARANJEIRA, M. F (Editor)
Spanish Vacuum Society, Spain (Funder/Sponsor)
Portuguese Vacuum Society, Portugal (Funder/Sponsor)
[1] CSIC, inst. cienc. materiales, Madrid, Spain
Source

Vacuum. 1994, Vol 45, Num 10-11, pp 1147-1149 ; ref : 9 ref

CODEN
VACUAV
ISSN
0042-207X
Scientific domain
Metallurgy, welding; Physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Keyword (fr)
Aiguille Cellule solaire Conversion photovoltaïque Eclairement Effet température Formation défaut Matériau amorphe Performance Résultat expérimental Silicium Silicium amorphe
Keyword (en)
Needle Solar cell Photovoltaic conversion Illumination Temperature effect Defect formation Amorphous material Performance Experimental result Silicon
Keyword (es)
Aguja Célula solar Conversión fotovoltaica Alumbrado Efecto temperatura Formación defecto Material amorfo Rendimiento Resultado experimental Silicio
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3323114

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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