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Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm

Author
GOBSSEN, K. W; SANTOS, M. B; CUNNINGHAM, J. E; JAN, W. Y
AT & T Bell Laboratories, Holmdel NJ 07733, United States
Source

IEEE photonics technology letters. 1993, Vol 5, Num 12, pp 1392-1394 ; ref : 12 ref

ISSN
1041-1135
Scientific domain
Electronics; Optics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Composé binaire Composé ternaire Etude expérimentale Exciton Gallium arséniure Largeur raie Modulateur optique Puits quantique multiple Rayonnement IR Spectre absorption Al As Ga AlGaAs As Ga GaAs Composé minéral
Keyword (en)
Aluminium arsenides Binary compounds Ternary compounds Experimental study Excitons Gallium arsenides Line widths Optical modulators Multiple quantum well Infrared radiation Absorption spectra Inorganic compounds
Keyword (es)
Pozo cuántico múltiple
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B79 Optical elements, devices, and systems / 001B40B79H Optical processors, correlators, and modulators

Pacs
4279H Optical processors, correlators, and modulators

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3323925

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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