Growth of InxG(1-x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes
- Author
- NAKAMURA, S
Nichia Chemical Industries Ltd, dep. res. development, Anan, Tokushima 774, Japan - Issue title
- LDSD optoelectronic materials & devices
- Author (monograph)
- MOHAMED HENINI (Editor)
- Source
Microelectronics journal. 1994, Vol 25, Num 8, pp 651-659 ; ref : 17 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Nitrure Caractéristique courant tension Caractéristique optique Composé III-V Composé ternaire Courbe croissance Diode électroluminescente Gallium Nitrure Hétérojonction double Indium Nitrure Processus fabrication Al Ga N AlGaN Ga In N InxGa(1-x)N Lumière violette
- Keyword (en)
- Aluminium Nitrides Voltage current curve Optical characteristic III-V compound Ternary compound Growth curve Light emitting diode Gallium Nitrides Double heterojunction Indium Nitrides Production process
- Keyword (es)
- Aluminio Nitruro Característica corriente tensión Característica óptica Compuesto III-V Compuesto ternario Curva crecimiento Diodo electroluminescente Galio Nitruro Heterounión doble Indio Nitruro Proceso fabricación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3337030
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0026-2692(94)90131-7 
https://dx.doi.org/10.1016/0026-2692(94)90131-7
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