In-situ observation of Ga adsorption during TMGa exposure on GaAs(001) surfaces with various As coverages
- Author
- OTAKE, S; SAKAMOTO, A; YAMAMOTO, M; IWASA, I
Fuji Xerox Co., Ltd, foundation res. lab., 2274 Hongo Ebina-shi, Kanagawa 243-04, Japan - Conference title
- ALE-3 : international symposium on atomic layer epitaxy and related surface processes
- Conference name
- ALE-3 : international symposium on atomic layer epitaxy and related surface processes (3 ; Sendai 1994-05-25)
- Author (monograph)
- OZEKI, Masashi (Editor)1 ; USUI, Akira (Editor); AOYAGI, Yoshinobu; NISHIZAWA, Jun-ichi (Editor)
[1] JRCAT, Tsukuba, Ibaraki 305, Japan - Source
Applied surface science. 1994, Vol 82-83, Num 1-4, pp 263-268 ; ref : 21 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Adsorption CVD Composé organométallique Croissance cristalline en phase vapeur Désorption Etude expérimentale Facteur réflexion In situ Méthode couche atomique Semiconducteur III-V Spectre absorption Spectre visible Composé minéral
- Keyword (en)
- Adsorption CVD Organometallic compounds Crystal growth from vapors Desorption Experimental study Reflectivity In situ Atomic layer method III-V semiconductors Absorption spectra Visible spectra Inorganic compounds
- Keyword (es)
- In situ Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3358047
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(94)90226-7 
https://dx.doi.org/10.1016/0169-4332(94)90226-7
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