Low threshold current density 1.3-μm strained-layer quantum-well lasers using n-type modulation doping
- Author
- YAMAMOTO, T; WATANABE, T; IDE, S; TANAKA, K; NOBUHARA, H; WAKAO, K
Fujitsu Laboratories Ltd, Atsugi, Japan - Source
IEEE photonics technology letters. 1994, Vol 6, Num 10, pp 1165-1166 ; ref : 6 ref
- ISSN
- 1041-1135
- Scientific domain
- Electronics; Optics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé quaternaire Contrainte compression Courant seuil Dopage Etude expérimentale Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Laser semiconducteur Modulation Puits quantique contraint Rayonnement IR As Ga In P As Ga In InGaAs InGaAsP Laser SCH Composé minéral
- Keyword (en)
- Quaternary compounds Compressive stress Threshold current Doping Experimental study Gallium arsenides Gallium phosphides Indium arsenides Indium phosphides Semiconductor lasers Modulation Strained quantum well Infrared radiation SCH laser Inorganic compounds
- Keyword (es)
- Tensión compresión Doping Pozo cuántico forzado
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3379035
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/68.329626 
https://dx.doi.org/10.1109/68.329626
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