Modelling of growth in a 5×3 inch multiwafer metalorganic vapour phase epitaxy reactor
- Author
- BERGUNDE, T1 ; DURST, F; KADINSKI, L; MAKAROV, YU. N; SCHÄFER, M; WEYERS, M1
[1] Ferdinand-Braun-Inst. Höchstfrequenztech., 12489 Berlin, Germany - Conference title
- Metalorganic vapor phase epitaxy 1994
- Conference name
- ICMOVPE-VII. International conference (7 ; Yokohama 1994-05-31)
- Author (monograph)
- MINAGAWA, SHIGEKAZU (Editor); HORIKOSHI, YOSHIJI (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Foundation for Advancement of International science (Funder/Sponsor)
[1] NTT Basic Research Laboratories, Kanagawa 243-01, Japan - Source
Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 630-635 ; ref : 11 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium arséniure Composé binaire Composé ternaire Couche épitaxique Croissance cristalline en phase vapeur Etude expérimentale Etude théorique Gallium arséniure Matériau semiconducteur Modélisation Pastille électronique Réacteur épitaxial VPE Al As Ga AlGaAs As Ga GaAs Composé minéral
- Keyword (en)
- Aluminium arsenides Binary compounds Ternary compounds Epitaxial layers Crystal growth from vapors Experimental study Theoretical study Gallium arsenides Semiconductor materials Modeling Wafers Epitaxial reactor VPE Inorganic compounds
- Keyword (es)
- Modelización Reactor epitaxial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3405914
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(94)91118-5 
https://dx.doi.org/10.1016/0022-0248(94)91118-5
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