LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
- Author
- DI FORTE-POISSON, M. A; BRYLINSKI, C; DELAGE, S. L; BLANCK, H; FLORIOT, D; CASSETTE, S; CHARTIER, E; PONS, D
Thomson-CSF, lab. cent. rech., 91404 Orsay, France - Conference title
- Metalorganic vapor phase epitaxy 1994
- Conference name
- ICMOVPE-VII. International conference (7 ; Yokohama 1994-05-31)
- Author (monograph)
- MINAGAWA, SHIGEKAZU (Editor); HORIKOSHI, YOSHIJI (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Foundation for Advancement of International science (Funder/Sponsor)
[1] NTT Basic Research Laboratories, Kanagawa 243-01, Japan - Source
Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 983-985 ; ref : 4 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Amplificateur puissance Base transistor Basse pression Circuit intégré monolithique Composé III-V Composé binaire Composé organométallique Composé ternaire Diffraction RX Dépôt chimique phase vapeur Etude expérimentale Gain puissance Gallium Arséniure Gallium Phosphure Indium Phosphure Oscillateur commande tension Procédé fabrication Spectre bruit Transistor hyperfréquence Transistor hétérojonction Transistor bipolaire
- Keyword (en)
- Power amplifier Transistor base Low pressure Monolithic integrated circuit III-V compound Binary compound Organometallic compound Ternary compound X ray diffraction Chemical vapor deposition Experimental study Power gain Gallium Arsenides Gallium Phosphides Indium Phosphides Voltage controlled oscillator Manufacturing process Noise spectrum Microwave transistor Heterojunction transistor Bipolar transistor
- Keyword (es)
- Amplificador potencia Base transistor Baja presión Circuito integrado monolítico Compuesto III-V Compuesto binario Compuesto organometálico Compuesto ternario Difracción RX Depósito químico fase vapor Estudio experimental Aumento potencia Galio Arseniuro Galio Fosfuro Indio Fosfuro Oscilador comando tensión Procedimiento fabricación Espectro ruido Transistor hiperfrecuencia Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3417439
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(94)91180-0 
https://dx.doi.org/10.1016/0022-0248(94)91180-0
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