Mapping CMOS radiation tolerance data on a 4-lane chart
- Author
- HOLMES-SIEDLE, A1 ; ADAMS, L
[1] Brunel univ. West London, cent. radiation damage studies, Uxbridge UB8 3PH, United Kingdom - Conference title
- IEEE annual conference on nuclear and space radiation effects NSREC'94
- Conference name
- IEEE annual conference on nuclear and space radiation effects NSREC'94 (31 ; Tucson AZ 1994-07-18)
- Author (monograph)
- BOESCH, H. EDWIN (Editor)1
IEEE, International (Funder/Sponsor)
[1] Army res. lab., Adelphi MD 20783-1197, United States - Source
IEEE transactions on nuclear science. 1994, Vol 41, Num 6, pp 2613-2618 ; 1 ; ref : 27 ref
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Circuit intégré Etude théorique Fiabilité Modélisation Résistance rayonnement Technologie MOS complémentaire
- Keyword (en)
- Integrated circuit Theoretical study Reliability Modeling Radiation resistance Complementary MOS technology
- Keyword (es)
- Circuito integrado Estudio teórico Fiabilidad Modelización Resistencia radiación Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3435027
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/23.340622 
https://dx.doi.org/10.1109/23.340622
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