Charge-collection mechanisms of heterostructure FETs
- Author
- MCMORROW, D1 ; MELINGER, J. S1 ; THANTU, N1 ; CAMPBELL, A. B1 ; WEATHERFORD, T. R; KNUDSON, A. R; LAN HU TRAN; PECZALSKI, A
[1] Naval res. lab., Washington DC 20375, United States - Conference title
- IEEE annual conference on nuclear and space radiation effects NSREC'94
- Conference name
- IEEE annual conference on nuclear and space radiation effects NSREC'94 (31 ; Tucson AZ 1994-07-18)
- Author (monograph)
- BOESCH, H. EDWIN (Editor)1
IEEE, International (Funder/Sponsor)
[1] Army res. lab., Adelphi MD 20783-1197, United States - Source
IEEE transactions on nuclear science. 1994, Vol 41, Num 6, pp 2055-2062 ; 1 ; ref : 13 ref
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Circuit intégré Composé III-V Composé ternaire Détérioration par rayonnement Etude expérimentale Fiabilité Gallium Arséniure Indium Arséniure Irradiation ion Irradiation laser Transistor effet champ Transistor hétérojonction Acuumulation charge Al As Ga AlGaAs As Ga In InGaAs Transistor grille isolée
- Keyword (en)
- Aluminium Arsenides Integrated circuit III-V compound Ternary compound Radiation damage Experimental study Reliability Gallium Arsenides Indium Arsenides Ion irradiation Laser irradiation Field effect transistor Heterojunction transistor
- Keyword (es)
- Aluminio Arseniuro Circuito integrado Compuesto III-V Compuesto ternario Deteriorización por irradiación Estudio experimental Fiabilidad Galio Arseniuro Indio Arseniuro Irradiación ión Irradiación láser Transistor efecto campo Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3437710
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/23.340542 
https://dx.doi.org/10.1109/23.340542
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