Reduction of interface contamination in regrown GaAs on AlGaAs using a novel two-step HCl gas etching process
- Author
- KIZUKI, H; FUJII, N; MIYASHITA, M; MIHASHI, Y; TAKAMIYA, S
Mitsubishi Electric Corp., optoelectronic microwave devices lab., Itami City, Hyogo 664, Japan - Conference title
- Vapour growth and epitaxy 1994
- Conference name
- ICVGE 8. International conference (8 ; Freiburg 1994-07-24)
- Author (monograph)
- MULLIN, J. B (Editor)1
German Association of Cristal Growth, Germany (Funder/Sponsor)
International Organisation of Crystal Growth, International (Funder/Sponsor)
[1] Electronic material consultancy, Malvern, United Kingdom - Source
Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 527-532 ; ref : 13 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium arséniure CVD Composé binaire Composé ternaire Contamination Densité dislocation Etude expérimentale Gallium arséniure Gravure Interface solide solide Matériau semiconducteur Perfection cristalline Surcouche Traitement surface Al As Ga AlGaAs As Ga GaAs Composé minéral Composé organométallique
- Keyword (en)
- Aluminium arsenides CVD Binary compounds Ternary compounds Contamination Dislocation density Experimental study Gallium arsenides Etching Solid-solid interfaces Semiconductor materials Crystal perfection Overlayers Surface treatments Inorganic compounds Organometallic compounds
- Keyword (es)
- Densidad dislocación Perfección cristalina
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3437942
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(94)00546-X 
https://dx.doi.org/10.1016/0022-0248(94)00546-X
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