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A wet etching technology for high temperature superconducting thin films

Author
KANG LIN; ZHENG YIANBIN; SUN ZHIJIAN; JI ZHENMING
Nanjing univ., Nanjing 210008, China
Source

Diwen wuli xuebao. 1995, Vol 17, Num 1, pp 44-47 ; ref : 4 ref

ISSN
1000-3258
Scientific domain
Condensed state physics
Publisher
Kexue Chubanshe, Beijing
Publication country
China
Document type
Article
Language
Chinese
Keyword (fr)
Baryum oxyde Composé quaternaire Couche mince Cuivre oxyde Etude expérimentale Gravure Procédé voie humide Préparation Relation fabrication propriété Supraconducteur haute température Température transition Yttrium oxyde Ba Cu O Y YBaCuO Composé minéral Métal transition composé
Keyword (en)
Barium oxides Quaternary compounds Thin films Copper oxides Experimental study Etching Wet process Preparation Fabrication property relation High-Tc superconductors Transition temperature Yttrium oxides Inorganic compounds Transition element compounds
Keyword (es)
Procedimiento vía húmeda Preparación Relación fabricación propiedad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D78 Superconducting films and low-dimensional structures / 001B70D78B High-tc films

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments

Pacs
8115 Methods of deposition of films and coatings; film growth and epitaxy

Pacs
8165 Surface treatments

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3440635

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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