Moisture resistance of plasma enhanced chemical vapor deposited oxides used for ultralarge scale integrated device applications
- Author
- ROBLES, S; YIEH, E; NGUYEN, B. C
Applied Materials Inc., Santa Clara CA 95054, United States - Conference name
- Electrochemical Society. Meeting (Honolulu HI 1993-05-16)
- Source
Journal of the Electrochemical Society. 1995, Vol 142, Num 2, pp 580-585 ; ref : 11 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Absorbance Caractérisation Circuit VLSI Contrainte Dépôt chimique phase vapeur Dépôt plasma Effet dimensionnel Effet température Epaisseur couche Etude comparative Etude expérimentale Fabrication microélectronique Indice réfraction Oxydant Résistance humidité Spectre IR Spectrométrie IR
- Keyword (en)
- Absorbance Characterization VLSI circuit Constraint Chemical vapor deposition Plasma deposition Size effect Temperature effect Layer thickness Comparative study Experimental study Microelectronic fabrication Refraction index Oxidant Humidity resistance Infrared spectrum Infrared spectrometry
- Keyword (es)
- Absorbancia Caracterización Circuito VLSI Coacción Depósito químico fase vapor Depósito plasma Efecto dimensional Efecto temperatura Espesor capa Estudio comparativo Estudio experimental Fabricación microeléctrica Indice refracción Oxidante Resistencia a la humedad Espectro IR Espectrometría IR
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3445335
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2044102 
https://dx.doi.org/10.1149/1.2044102
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