Surface structure of silicon observed by ultra-high-vacuum transmission electron microscopy at an atomic level
- Author
- ICHIHASHI, T; IIJIMA, S
- Source
NEC research & development. 1994, Vol 35, Num 2, pp 144-148 ; ref : 3 ref
- CODEN
- NECRAU
- ISSN
- 0547-051X
- Scientific domain
- Electronics; Computer science
- Publisher
- NEC Creative, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse surface Etude expérimentale Silicium Structure surface TEM
- Keyword (en)
- Surface analysis Experimental study Silicon Surface structure TEM
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16B Transmission, reflection and scanning electron microscopy(including ebic)
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3456118
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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