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Surface structure of silicon observed by ultra-high-vacuum transmission electron microscopy at an atomic level

Author
ICHIHASHI, T; IIJIMA, S
Source

NEC research & development. 1994, Vol 35, Num 2, pp 144-148 ; ref : 3 ref

CODEN
NECRAU
ISSN
0547-051X
Scientific domain
Electronics; Computer science
Publisher
NEC Creative, Tokyo
Publication country
Japan
Document type
Article
Language
English
Keyword (fr)
Analyse surface Etude expérimentale Silicium Structure surface TEM
Keyword (en)
Surface analysis Experimental study Silicon Surface structure TEM
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16B Transmission, reflection and scanning electron microscopy(including ebic)

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3456118

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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