Effects of a compositionally-graded InxGa1-xAs base in abrupt-emitter InP/InGaAs heterojunction bipolar transistors
- Author
- KURISHIMA, K; NAKAJIMA, H; YAMAHATA, S; KOBAYASHI, T; MATSUOKA, Y
NTT LSI Laboratories, Atsugi-shi Kanagawa 243-01, Japan - Conference title
- Solid state devices and materials
- Conference name
- SSDM'94. International conference (Yokohama, Kanagawa 1994-08-23)
- Author (monograph)
- TARUCHA, SEIGO (Editor); ARAKAWA, YASUHIKO (Editor); SHIRAKI, YASUHIRO (Editor); SUSAKI, WATARU (Editor); YOSHIMI, MAKOTO (Editor); FUKUMA, MASAO (Editor); FURUYA, KAZUHITO (Editor); HORIKOSHI, YOSHIJI (Editor); IMAI, HAJIME (Editor); ISHIWARA, HIROSHI (Editor); KARAYAMA, YOSHIFUMI (Editor); MIYAO, MASANOBU (Editor); NAKASHIMA, HISAO (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor) - Source
Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1221-1227 ; 1 ; ref : 19 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande conduction Base transistor Capacité électrique Caractéristique courant tension Composé III-V Composé binaire Composé ternaire Ecoulement hors équilibre Electron chaud Etude expérimentale Fréquence coupure Fréquence oscillation Gain courant Gallium Arséniure Indium Arséniure Indium Phosphure Injection électron Jonction graduelle Régime signal faible Structure bande Transistor hyperfréquence Transistor hétérojonction Vitesse groupe As Ga In In P InGaAs InP Jonction émetteur collecteur Transistor bipolaire
- Keyword (en)
- Conduction band Transistor base Capacitance Voltage current curve III-V compound Binary compound Ternary compound Non equilibrium flow Hot electron Experimental study Cut off frequency Oscillation frequency Current gain Gallium Arsenides Indium Arsenides Indium Phosphides Electron injection Graded junction Small signal behavior Band structure Microwave transistor Heterojunction transistor Group velocity Bipolar transistor
- Keyword (es)
- Banda conducción Base transistor Capacitancia Característica corriente tensión Compuesto III-V Compuesto binario Compuesto ternario Flujo fuera equilibrio Electrón caliente Estudio experimental Frecuencia corte Frecuencia oscilación Ganancia corriente Galio Arseniuro Indio Arseniuro Indio Fosfuro Inyección electrón Unión graduada Régimen señal débil Estructura banda Transistor hiperfrecuencia Transistor heterounión Velocidad grupo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3475482
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.34.1221 
https://dx.doi.org/10.1143/JJAP.34.1221
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