Exploration of entire range of III-V semiconductors and their device applications
- Author
- RAZEGHI, M; CHOI, Y. H; HE, X; SUN, C. J
Northwestern univ., cent. quantum devices, dep. electrical eng. computer sci., Evanston IL, United States - Conference title
- International conference on materials for microelectronics
- Conference name
- International conference on materials for microelectronics (1 ; Barcelona 1994-10-17)
- Author (monograph)
- Institute of Materials, London, United Kingdom (Funder/Sponsor)
- Source
Materials science and technology. 1995, Vol 11, Num 1, pp 3-30 ; ref : 83 ref
- CODEN
- MSCTEP
- ISSN
- 0267-0836
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- Maney, Leeds
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Article synthèse Couche mince Croissance cristalline Microstructure Potentiel Propriété optique Propriété physique Rayonnement UV Semiconducteur III-V Semiconducteur bande interdite étroite Structure cristalline
- Keyword (en)
- Reviews Thin films Crystal growth Microstructure Potentials Optical properties Physical properties Ultraviolet radiation III-V semiconductors Narrow band gap semiconductors Crystal structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3494575
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1179/mst.1995.11.1.3 
https://dx.doi.org/10.1179/mst.1995.11.1.3
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Materials science and technology\";s:9:\"\u0000*\u0000stitle\";s:19:\"Mater. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"3\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-0836\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"RAZEGHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"CHOI, Y. H\";i:1;s:5:\"HE, X\";i:2;s:9:\"SUN, C. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSCTEP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:58:\"International conference on materials for microelectronics\";s:8:\"\u0000*\u0000title\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:8:\"\u0000*\u0000place\";s:5:\"Leeds\";s:6:\"\u0000*\u0000pub\";s:5:\"Maney\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Materials science and technology\";s:9:\"\u0000*\u0000stitle\";s:19:\"Mater. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"3\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-0836\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"RAZEGHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"CHOI, Y. H\";i:1;s:5:\"HE, X\";i:2;s:9:\"SUN, C. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSCTEP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:58:\"International conference on materials for microelectronics\";s:8:\"\u0000*\u0000title\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:8:\"\u0000*\u0000place\";s:5:\"Leeds\";s:6:\"\u0000*\u0000pub\";s:5:\"Maney\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Materials science and technology\";s:9:\"\u0000*\u0000stitle\";s:19:\"Mater. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"3\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-0836\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"RAZEGHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"CHOI, Y. H\";i:1;s:5:\"HE, X\";i:2;s:9:\"SUN, C. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSCTEP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:58:\"International conference on materials for microelectronics\";s:8:\"\u0000*\u0000title\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:8:\"\u0000*\u0000place\";s:5:\"Leeds\";s:6:\"\u0000*\u0000pub\";s:5:\"Maney\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Materials science and technology\";s:9:\"\u0000*\u0000stitle\";s:19:\"Mater. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"3\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-0836\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"RAZEGHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"CHOI, Y. H\";i:1;s:5:\"HE, X\";i:2;s:9:\"SUN, C. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSCTEP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:58:\"International conference on materials for microelectronics\";s:8:\"\u0000*\u0000title\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:8:\"\u0000*\u0000place\";s:5:\"Leeds\";s:6:\"\u0000*\u0000pub\";s:5:\"Maney\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1179\/mst.1995.11.1.3\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Materials science and technology\";s:9:\"\u0000*\u0000stitle\";s:19:\"Mater. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"3\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0267-0836\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"RAZEGHI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"M\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"CHOI, Y. H\";i:1;s:5:\"HE, X\";i:2;s:9:\"SUN, C. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSCTEP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:58:\"International conference on materials for microelectronics\";s:8:\"\u0000*\u0000title\";s:81:\"Exploration of entire range of III-V semiconductors and their device applications\";s:8:\"\u0000*\u0000place\";s:5:\"Leeds\";s:6:\"\u0000*\u0000pub\";s:5:\"Maney\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
