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Modelling of bias sputter deposition processes

Author
BERG, S; KATARDJIEV, I. V
Uppsala univ., inst. technology, 75121 Uppsala, Sweden
Conference title
ICMTCF94 : international conference on metallurgical coatings and thin films
Conference name
ICMTCF94 : international conference on metallurgical coatings and thin films (21 ; San Diego CA 1994-04-25)
Author (monograph)
SARTWELL, BRUCE D (Editor)1 ; MCGUIRE, GARY E (Editor)2 ; JEHN, HERMANN A (Editor)3
American Vacuum Society ; Vacuum Metallurgy, United States (Funder/Sponsor)
American Vacuum Society ; Thin Film Division, United States (Funder/Sponsor)
[1] US naval res. lab., Washington DC, United States
[2] Microelectronics cent. North Carolina, Research Triangle Park NC, United States
[3] Forschunginstitut Edelmetalle Metallchemie, Schwäbisch Gmünd, Germany
Source

Surface & coatings technology. 1994, Vol 68-69, pp 325-331 ; ref : 16 ref

CODEN
SCTEEJ
ISSN
0257-8972
Scientific domain
General chemistry, physical chemistry; Metallurgy, welding
Publisher
Elsevier, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Dépôt physique phase vapeur Etude expérimentale Modèle physique Modélisation Méthode Monte Carlo Potentiel polarisation Procédé dépôt Pulvérisation irradiation Simulation
Keyword (en)
Physical vapor deposition Experimental study Physical model Modeling Monte Carlo method Polarization potential Deposition process Sputtering Simulation
Keyword (es)
Modelo físico Modelización Potencial polarización Procedimiento revestimiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Pacs
8115C Deposition by sputtering

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3501895

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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