Surface properties of the semiconductor CsAu
- Author
- WERTHEIM, G. K; ROWE, J. E; CHIANG, C.-M; MALIC, R. A; BUCHANAN, D. N. E
AT&T Bell Laboratories, Murray Hill NJ 07974, United States - Source
Surface science. 1995, Vol 330, Num 1, pp 27-33 ; ref : 12 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage binaire Alliage semiconducteur Césium alliage Degré recouvrement Etat adsorbé Etude expérimentale Or alliage Rayon X Recuit Semiconducteur type n Spectrométrie photoélectron Structure surface Ségrégation Alliage AuCs Au Cs Métal transition alliage
- Keyword (en)
- Binary alloys Semiconductor alloys Cesium alloys Coverage rate Adsorbed state Experimental study Gold alloys X radiation Annealing N-type conductors Photoelectron spectroscopy Surface structure Segregation Transition element alloys
- Keyword (es)
- Grado recubrimiento Estado adsorbido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra / 001B70I60D Adsorbed layers and thin films
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3527605
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0039-6028(95)00114-X 
https://dx.doi.org/10.1016/0039-6028(95)00114-X
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