Improvement in dielectric properties of low temperature PECVD silicon dioxide by reaction with hydrazine
- Author
- VOGT, K. W; HOUSTON, M; CEILER, M. F; ROBERTS, C. E; KOHL, P. A
Georgia inst. technology, school chemical eng., Atlanta GA 30332-0100, United States - Source
Journal of electronic materials. 1995, Vol 24, Num 6, pp 751-755 ; ref : 17 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- CVD Constante diélectrique Etude expérimentale Perte diélectrique Plasma Silicium oxyde O Si SiO2 Composé minéral
- Keyword (en)
- CVD Permittivity Experimental study Dielectric loss Plasma Silicon oxides Inorganic compounds
- Keyword (es)
- Pérdida dieléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids / 001B70G22C Permittivity (dielectric function)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3538041
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02659735 
https://dx.doi.org/10.1007/BF02659735
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