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Recrystallization of strained GexSi1-x/Si layers with various Ge gradients and in the presence of impurities

Author
CORNI, F1 ; TONINI, R1 ; BALBONI, R; VESCAN, L
[1] Univ. Modena, dep. physics, 41100 Modena, Italy
Conference title
EXMATEC '94: international workshop on expert evaluation and control of compound semiconductor materials and technologies
Conference name
EXMATEC '94: international workshop on expert evaluation and control of compound semiconductor materials and technologies (2 ; Parma 1994-05-18)
Author (monograph)
FORNARI, Roberto (Editor)
CNR-MASPEC inst., Parma, Italy
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 9-13 ; ref : 23 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Cinétique Couche mince Couche épitaxique Déformation Dépôt physique phase vapeur Effet impureté Epitaxie jet moléculaire Epitaxie Etude expérimentale Germanium siliciure Interface Matériau amorphe Morphologie Recristallisation Rugosité
Keyword (en)
Kinetics Thin films Epitaxial layers Deformation Physical vapor deposition Impurity effect Molecular beam epitaxy Epitaxy Experimental study Germanium silicides Interfaces Amorphous material Morphology Recrystallization Roughness
Keyword (es)
Efecto impureza Material amorfo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pacs
6855J Structure and morphology; thickness

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3549716

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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