Development of chemical beam epitaxy for the deposition of gallium nitride
- Author
- KINGSLEY, C. R1 ; WHITAKER, T. J1 ; WEE, A. T. S; JACKMAN, R. B; FOORD, J. S1
[1] Univ. Oxford, physical chemical lab., Oxford OX1 3QZ, United Kingdom - Conference title
- High temperature electronics : materials, devices and applications
- Conference name
- EMRS 1994 spring meeting. Symposium E (Strasbourg 1994-05-24)
- Author (monograph)
- FRICKE, K (Editor)1 ; KROZER, V (Editor)
European Materials Research Society, International (Funder/Sponsor)
[1] Tech. Hochschule Darmstadt ; Inst. Hochfrequenztech., 64283 Darmstadt, Germany - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 78-82 ; ref : 22 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Barrière Schottky CVD Composé III-V Couche mince Couche épitaxique Dispositif semiconducteur Epitaxie Etude expérimentale Gallium nitrure Mesure électrique Nitrure Spectrométrie photoélectron XRD
- Keyword (en)
- Schottky barrier CVD III-V compound Thin films Epitaxial layers Semiconductor devices Epitaxy Experimental study Gallium nitrides Electrical measurement Nitrides Photoelectron spectroscopy XRD
- Keyword (es)
- Barrera Schottky Compuesto III-V Medida eléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3553437
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(94)04034-2 
https://dx.doi.org/10.1016/0921-5107(94)04034-2
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