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In-sit X-ray studies of organometallic vapor phase epitaxy growth

Author
FUOSS, P. H1 ; KISKER, D. W; STEPHENSON, G. B; BRENNAN, S
[1] AT & T Bell Laboratories, Murray Hill NY 07974, United States
Conference title
Workshop on critical issues in epitaxy
Conference name
Workshop on critical issues in epitaxy (Boulder CO 1994-06-22)
Author (monograph)
MAHAJAN, S (Editor)1 ; TEMKIN, H (Editor)
[1] Carnegie Mellon univ. ; dep. materials sci. eng., Pittsburgh PA 15213, United States
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 30, Num 2-3, pp 99-108 ; ref : 19 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
CVD Composé organométallique Couche mince Couche épitaxique Diffusion RX Epitaxie Etude expérimentale Fluorescence Réacteur épitaxial Spectrométrie RX
Keyword (en)
CVD Organometallic compounds Thin films Epitaxial layers X ray scattering Epitaxy Experimental study Fluorescence Epitaxial reactor X-ray spectroscopy
Keyword (es)
Difusión rayo X Reactor epitaxial
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3553658

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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