Large area deposition of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition
- Author
- KARAM, N. H1 ; SUDHARSANAN, R1 ; MASTROVITO, A1 ; SANFACON, M. M1 ; SMITH, F. T. J; LEONARD, M; EL-MASRY, N. A
[1] Spire Corp., Bedford MA 01730, United States - Conference title
- 1993 US workshop on the physics and chemistry of mercury cadmium telluride and other IR materials
- Conference name
- 1993 US workshop on the physics and chemistry of mercury cadmium telluride and other IR materials (Seattle WA 1993-10-19)
- Author (monograph)
- WATERMAN, James R (Editor)1
US Army CECOM Night Vision and Electronic Sensors Directorate, United States (Funder/Sponsor)
US Air Force Wright Laboratory, United States (Funder/Sponsor)
US Office of Naval Technology, United States (Funder/Sponsor)
[1] Naval res. lab., Washington DC, United States - Source
Journal of electronic materials. 1995, Vol 24, Num 5, pp 483-489 ; ref : 17 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- CVD Cadmium tellurure Composition chimique Composé ternaire Couche épitaxique Croissance cristalline en phase vapeur Etude expérimentale Hétéroépitaxie LPE Matériau semiconducteur Solution solide Zinc tellurure Cd Te Zn Cd1-xZnxTe Substrat GaAs Substrat Si Composé minéral Composé organométallique Métal transition composé
- Keyword (en)
- CVD Cadmium tellurides Chemical composition Ternary compounds Epitaxial layers Crystal growth from vapors Experimental study Heteroepitaxy LPE Semiconductor materials Solid solutions Zinc tellurides Inorganic compounds Organometallic compounds Transition element compounds
- Keyword (es)
- Heteroepitaxia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3558658
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02657951 
https://dx.doi.org/10.1007/BF02657951
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