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Surface photovoltage and deep level transient spectrocopy measurement of the Fe impurities in front-end operations of the IC CMOS process

Author
NAUKA, K; GOMEZ, D. A
Hewlett-Packard Co., Palo Alto CA 94304, United States
Source

Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp L98-L99 ; ref : 8 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Etude expérimentale Spectrométrie transitoire niveau profond Circuit intégré Contamination Effet photovoltaïque Fabrication microélectronique Fer Monitorage Particule métallique Pastille électronique Potentiel surface Technologie MOS complémentaire
Keyword (en)
Experimental study Deep level transient spectrometry
Keyword (es)
Estudio experimental Espectrometría transitoria nivel profundo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3569306

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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