The characterization of the growth of sub-monolayer coverages (1/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study
- Author
- WOOLF, D. A1 ; ROSE, K. C; MORRIS, S. J1 ; WESTWOOD, D. I1 ; RUMBERG, J; REINHARDT, J; RICHTER, W; WILLIAMS, R. H1
[1] Univ. Wales coll. Cardiff, dep. physics, Cardiff CF2 3YB, United Kingdom - Conference title
- Molecular beam epitaxy 1994. I
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 197-201 ; 1 ; ref : 15 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Béryllium Croissance cristalline en phase vapeur Degré recouvrement Epitaxie jet moléculaire Etude expérimentale Hétérojonction Matériau semiconducteur RHEED Reconstruction surface Réflectance spectrale Silicium Structure surface Be Si Non métal
- Keyword (en)
- Beryllium Crystal growth from vapors Coverage rate Molecular beam epitaxy Experimental study Heterojunctions Semiconductor materials RHEED Surface reconstruction Spectral reflectance Silicon Surface structure Nonmetals
- Keyword (es)
- Grado recubrimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering / 001B60A14H Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films / 001B70H20C Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pacs
- 7820C Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3571268
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)80206-R 
https://dx.doi.org/10.1016/0022-0248(95)80206-R
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"197\";s:8:\"\u0000*\u0000epage\";s:3:\"201\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"WOOLF\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"ROSE, K. C\";i:1;s:12:\"MORRIS, S. J\";i:2;s:14:\"WESTWOOD, D. I\";i:3;s:10:\"RUMBERG, J\";i:4;s:12:\"REINHARDT, J\";i:5;s:10:\"RICHTER, W\";i:6;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:30:\"Molecular beam epitaxy 1994. I\";s:8:\"\u0000*\u0000title\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"197\";s:8:\"\u0000*\u0000epage\";s:3:\"201\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"WOOLF\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"ROSE, K. C\";i:1;s:12:\"MORRIS, S. J\";i:2;s:14:\"WESTWOOD, D. I\";i:3;s:10:\"RUMBERG, J\";i:4;s:12:\"REINHARDT, J\";i:5;s:10:\"RICHTER, W\";i:6;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:30:\"Molecular beam epitaxy 1994. I\";s:8:\"\u0000*\u0000title\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"197\";s:8:\"\u0000*\u0000epage\";s:3:\"201\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"WOOLF\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"ROSE, K. C\";i:1;s:12:\"MORRIS, S. J\";i:2;s:14:\"WESTWOOD, D. I\";i:3;s:10:\"RUMBERG, J\";i:4;s:12:\"REINHARDT, J\";i:5;s:10:\"RICHTER, W\";i:6;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:30:\"Molecular beam epitaxy 1994. I\";s:8:\"\u0000*\u0000title\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"197\";s:8:\"\u0000*\u0000epage\";s:3:\"201\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"WOOLF\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"ROSE, K. C\";i:1;s:12:\"MORRIS, S. J\";i:2;s:14:\"WESTWOOD, D. I\";i:3;s:10:\"RUMBERG, J\";i:4;s:12:\"REINHARDT, J\";i:5;s:10:\"RICHTER, W\";i:6;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:30:\"Molecular beam epitaxy 1994. I\";s:8:\"\u0000*\u0000title\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80206-R\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:3:\"197\";s:8:\"\u0000*\u0000epage\";s:3:\"201\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"WOOLF\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"ROSE, K. C\";i:1;s:12:\"MORRIS, S. J\";i:2;s:14:\"WESTWOOD, D. I\";i:3;s:10:\"RUMBERG, J\";i:4;s:12:\"REINHARDT, J\";i:5;s:10:\"RICHTER, W\";i:6;s:14:\"WILLIAMS, R. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:30:\"Molecular beam epitaxy 1994. I\";s:8:\"\u0000*\u0000title\";s:206:\"The characterization of the growth of sub-monolayer coverages (1\/200th to 1 monolayer) of Si and Be on GaAs(001) : a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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