Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide
- Author
- OBERMAN, D. B; LEE, H; GÖTZ, W. K; HARRIS, J. S
Stanford univ., solid state electronics lab., Stanford CA 94305, United States - Conference title
- Molecular beam epitaxy 1994. II
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 912-915 ; 2 ; ref : 5 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Couche épitaxique Croissance cristalline Epitaxie jet moléculaire Etude expérimentale Gallium nitrure Hydrogène Azoture Matériau semiconducteur Photoluminescence Plasma Résonance cyclotronique électronique Ga N GaN Composé minéral
- Keyword (en)
- Binary compounds Epitaxial layers Crystal growth Molecular beam epitaxy Experimental study Gallium nitrides Hydrogen Azides Semiconductor materials Photoluminescence Plasma Electron cyclotron-resonance Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3573146
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)80072-K 
https://dx.doi.org/10.1016/0022-0248(95)80072-K
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