Influence of growth parameters on the properties of ZnSe-GaAs(001) heterostructures
- Author
- VANZETTI, L1 ; BONANNI, A1 ; BRATINA, G; SORBA, L1 ; FRANCIOSI, A1 ; LOMASCOLO, M; GRECO, D; CINGOLANI, R
[1] Ist. nazionale fisica materia, lab. tecnologie avanzate superfici catalisi, 34012 Trieste, Italy - Conference title
- Molecular beam epitaxy 1994. II
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 765-769 ; 2 ; ref : 20 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composition chimique Composé binaire Couche épitaxique Croissance cristalline Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Hétérojonction Interface solide solide Matériau semiconducteur Propriété optique Relation fabrication propriété Zinc séléniure As Ga GaAs Se Zn ZnSe Composé minéral Métal transition composé
- Keyword (en)
- Chemical composition Binary compounds Epitaxial layers Crystal growth Molecular beam epitaxy Experimental study Gallium arsenides Heterojunctions Solid-solid interfaces Semiconductor materials Optical properties Fabrication property relation Zinc selenides Inorganic compounds Transition element compounds
- Keyword (es)
- Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66H Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pacs
- 6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3573320
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)80043-C 
https://dx.doi.org/10.1016/0022-0248(95)80043-C
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