Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide
- Author
- WATANABE, K1 ; HOSOYA, M; HARA, K1 ; YOSHINO, J1 ; MUNEKATA, H1 ; KUKIMOTO, H1
[1] Tokyo inst. technology, imaging sci. eng. lab., Midori-ku, Yokohama 226, Japan - Conference title
- Molecular beam epitaxy 1994. I
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 612-615 ; 1 ; ref : 9 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Croissance cristalline en phase vapeur Effet physique rayonnement Etat natif Etude expérimentale Faisceau électron Gallium arséniure Matériau semiconducteur Microstructure Mode opératoire Mécanisme croissance Oxyde Prétraitement Substrat Aire sélective As Ga GaAs Composé minéral
- Keyword (en)
- Binary compounds Crystal growth from vapors Physical radiation effects Native state Experimental study Electron beams Gallium arsenides Semiconductor materials Microstructure Operating mode Growth mechanism Oxides Pretreatment Substrates Selective area Inorganic compounds
- Keyword (es)
- Estado nativo Método operatorio Mecanismo crecimiento Pretratamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage / 001B60A80F Electrons and positron radiation effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3575467
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)80282-H 
https://dx.doi.org/10.1016/0022-0248(95)80282-H
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