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Molecular beam epitaxy growth and properties of GaAs/(AlGa)As p-type heterostructures on (100), (011), (111)B, (211)B, (311)B, and (311)A oriented GaAs

Author
HENINI, M1 ; CRUMP, P. A1 ; RODGERS, P. J1 ; GALLAGHER, B. L1 ; VICKERS, A. J1 ; HILL, G
[1] Univ. Nottingham, dep. physics, Nottingham NG7 2RD, United Kingdom
Conference title
Molecular beam epitaxy 1994. I
Conference name
MBE-VIII. International conference (8 ; Osaka 1994-08-29)
Author (monograph)
HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan
Source

Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 446-450 ; 1 ; ref : 10 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Addition béryllium Aluminium arséniure Composé binaire Composé ternaire Dépendance température Effet Hall quantique Etude expérimentale Gallium arséniure Hétérostructure Magnétorésistance Matériau dopé Mobilité Semiconducteur III-V Al As Ga AlGaAs As Ga GaAs Composé minéral
Keyword (en)
Beryllium additions Aluminium arsenides Binary compounds Ternary compounds Temperature dependence Quantum Hall effect Experimental study Gallium arsenides Heterostructures Magnetoresistance Doped materials Mobility III-V semiconductors Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40K Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pacs
7340K III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3578409

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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