The black silicon method : a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
- Author
- JANSEN, H; DE BOER, M; LEGTENBERG, R; ELWENSPOEK, M
Univ. Twente, MESA res. inst., 7500 AE Enschede, Netherlands - Conference title
- MME'94 : european workshop in micromechanics
- Conference name
- MME'94 : european workshop in micromechanics (5 ; Pisa 1994-09-05)
- Author (monograph)
- DARIO, Paolo (Author of introductory parts); DE ROOIJ, Nico (Author of introductory parts); PUERS, Bob (Author of introductory parts); LEISTIKO, Otto (Author of introductory parts)
- Source
Journal of micromechanics and microengineering (Print). 1995, Vol 5, Num 2, pp 115-120 ; ref : 16 ref
- ISSN
- 0960-1317
- Scientific domain
- Electronics; Mechanical engineering
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Etude expérimentale Fabrication microélectronique Fluorine Gravure ionique réactive Gravure plasma Profil profondeur Silicium Contrôle profil
- Keyword (en)
- Experimental study Microelectronic processing Fluorspar Reactive ion etching Plasma etching Depth profile Silicon
- Keyword (es)
- Estudio experimental Perfil profundidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3583422
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0960-1317/5/2/015 
https://dx.doi.org/10.1088/0960-1317/5/2/015
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