Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies
- Author
- KLEIN, W; BÖHM, G; HEISS, H; KRAUS, S; XU, D; SEMERAD, R; TRÄNKLE, G; WEIMANN, G
Tech. Univ. München, Walter-Schottky-Inst., 85748 Garching, Germany - Conference title
- Molecular beam epitaxy 1994. II
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1252-1255 ; 2 ; ref : 6 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Arséniure Caractéristique électrique Composé III-V Composé ternaire Condensation faisceau moléculaire Croissance pseudomorphique Effet composition Etude expérimentale Fréquence coupure Gallium Arséniure Indium Arséniure Indium Processus fabrication Transistor mobilité électron élevée Al As In As Ga In In0,52Al0,48As InxGa1-xAs
- Keyword (en)
- Aluminum Arsenides Electrical characteristic III-V compound Ternary compound Molecular beam condensation Pseudomorphic growth Composition effects Experimental study Cut off frequency Gallium Arsenides Indium Arsenides Indium Production process High electron mobility transistors
- Keyword (es)
- Arseniuro Característica eléctrica Compuesto III-V Compuesto ternario Condensación haz molecular Crecimiento pseudomórfico Estudio experimental Frecuencia corte Arseniuro Arseniuro Proceso fabricación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3588457
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/0022-0248(95)80139-4 
https://dx.doi.org/10.1016/0022-0248(95)80139-4
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:4:\"1252\";s:8:\"\u0000*\u0000epage\";s:4:\"1255\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KLEIN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:8:\"B\u00d6HM, G\";i:1;s:8:\"HEISS, H\";i:2;s:8:\"KRAUS, S\";i:3;s:5:\"XU, D\";i:4;s:10:\"SEMERAD, R\";i:5;s:11:\"TR\u00c4NKLE, G\";i:6;s:10:\"WEIMANN, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:31:\"Molecular beam epitaxy 1994. II\";s:8:\"\u0000*\u0000title\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:4:\"1252\";s:8:\"\u0000*\u0000epage\";s:4:\"1255\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KLEIN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:8:\"B\u00d6HM, G\";i:1;s:8:\"HEISS, H\";i:2;s:8:\"KRAUS, S\";i:3;s:5:\"XU, D\";i:4;s:10:\"SEMERAD, R\";i:5;s:11:\"TR\u00c4NKLE, G\";i:6;s:10:\"WEIMANN, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:31:\"Molecular beam epitaxy 1994. II\";s:8:\"\u0000*\u0000title\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:4:\"1252\";s:8:\"\u0000*\u0000epage\";s:4:\"1255\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KLEIN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:8:\"B\u00d6HM, G\";i:1;s:8:\"HEISS, H\";i:2;s:8:\"KRAUS, S\";i:3;s:5:\"XU, D\";i:4;s:10:\"SEMERAD, R\";i:5;s:11:\"TR\u00c4NKLE, G\";i:6;s:10:\"WEIMANN, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:31:\"Molecular beam epitaxy 1994. II\";s:8:\"\u0000*\u0000title\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:4:\"1252\";s:8:\"\u0000*\u0000epage\";s:4:\"1255\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KLEIN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:8:\"B\u00d6HM, G\";i:1;s:8:\"HEISS, H\";i:2;s:8:\"KRAUS, S\";i:3;s:5:\"XU, D\";i:4;s:10:\"SEMERAD, R\";i:5;s:11:\"TR\u00c4NKLE, G\";i:6;s:10:\"WEIMANN, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:31:\"Molecular beam epitaxy 1994. II\";s:8:\"\u0000*\u0000title\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0022-0248(95)80139-4\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:3:\"1-4\";s:8:\"\u0000*\u0000spage\";s:4:\"1252\";s:8:\"\u0000*\u0000epage\";s:4:\"1255\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"KLEIN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:8:\"B\u00d6HM, G\";i:1;s:8:\"HEISS, H\";i:2;s:8:\"KRAUS, S\";i:3;s:5:\"XU, D\";i:4;s:10:\"SEMERAD, R\";i:5;s:11:\"TR\u00c4NKLE, G\";i:6;s:10:\"WEIMANN, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:31:\"Molecular beam epitaxy 1994. II\";s:8:\"\u0000*\u0000title\";s:127:\"Molecular beam epitaxial growth of pseudomorphic InAlAs\/InGaAs high electron mobility transistors with high cut-off frequencies\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
