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Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies

Author
KLEIN, W; BÖHM, G; HEISS, H; KRAUS, S; XU, D; SEMERAD, R; TRÄNKLE, G; WEIMANN, G
Tech. Univ. München, Walter-Schottky-Inst., 85748 Garching, Germany
Conference title
Molecular beam epitaxy 1994. II
Conference name
MBE-VIII. International conference (8 ; Osaka 1994-08-29)
Author (monograph)
HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan
Source

Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1252-1255 ; 2 ; ref : 6 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium Arséniure Caractéristique électrique Composé III-V Composé ternaire Condensation faisceau moléculaire Croissance pseudomorphique Effet composition Etude expérimentale Fréquence coupure Gallium Arséniure Indium Arséniure Indium Processus fabrication Transistor mobilité électron élevée Al As In As Ga In In0,52Al0,48As InxGa1-xAs
Keyword (en)
Aluminum Arsenides Electrical characteristic III-V compound Ternary compound Molecular beam condensation Pseudomorphic growth Composition effects Experimental study Cut off frequency Gallium Arsenides Indium Arsenides Indium Production process High electron mobility transistors
Keyword (es)
Arseniuro Característica eléctrica Compuesto III-V Compuesto ternario Condensación haz molecular Crecimiento pseudomórfico Estudio experimental Frecuencia corte Arseniuro Arseniuro Proceso fabricación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3588457

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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