InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers
- Author
- AUER, U; REUTER, R; HEEDT, C; PROST, W; TEGUDE, F. J
Gerhard-Mercator-Univ. GH Duisburg, solid state electronics eng., 47057 Duisburg, Germany - Conference title
- Molecular beam epitaxy 1994. II
- Conference name
- MBE-VIII. International conference (8 ; Osaka 1994-08-29)
- Author (monograph)
- HIYAMIZU, S (Editor)1 ; SHIRAKI, Y (Editor); GONDA, S (Editor)1
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
Electrochemical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electrical Engineers of Japan, Tokyo, Japan (Funder/Sponsor)
Institute of Electronics, Information and Communication Engineers, Japan (Funder/Sponsor)
Japanese Association of Crystal Growth, Japan (Funder/Sponsor)
Physical Society of Japan, Tokyo, Japan (Funder/Sponsor)
Surface Science Society of Japan, Japan (Funder/Sponsor)
Vacuum Society of Japan, Japan (Funder/Sponsor)
[1] Osaka univ., Japan - Source
Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1225-1229 ; 2 ; ref : 10 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé III-V Composé binaire Etude comparative Etude expérimentale Gallium Arséniure Indium Arséniure Indium Phosphure Superréseau contraint Transistor effet champ Transistor hétérojonction As Ga As In GaAs In0,77Ga0,23As InAs
- Keyword (en)
- III-V compound Binary compound Comparative study Experimental study Gallium Arsenides Indium Arsenides Indium Phosphides Strained superlattice Field effect transistors Heterojunction transistor
- Keyword (es)
- Compuesto III-V Compuesto binario Estudio comparativo Estudio experimental Arseniuro Arseniuro Fosfuro Superred forzada Transistor heterounión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3588768
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(95)80134-X 
https://dx.doi.org/10.1016/0022-0248(95)80134-X
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