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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Author
HOBART, K. D1 ; GODBEY, D. J1 ; TWIGG, M. E1 ; FATEMI, M1 ; THOMPSON, P. E1 ; SIMONS, D. S
[1] Naval res. lab., electronics sci. technology div., Washington DC 20375-5000, United States
Source

Surface science. 1995, Vol 334, Num 1-3, pp 29-38 ; ref : 36 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Addition antimoine Défaut cristallin Dépendance température Effet concentration Etude expérimentale Matériau dopé Profil profondeur Silicium Ségrégation Si:Sb Si
Keyword (en)
Antimony additions Crystal defects Temperature dependence Quantity ratio Experimental study Doped materials Depth profiles Silicon Segregation
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities

Pacs
6835D Composition; defects and impurities

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3592483

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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