Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy
- Author
- HOBART, K. D1 ; GODBEY, D. J1 ; TWIGG, M. E1 ; FATEMI, M1 ; THOMPSON, P. E1 ; SIMONS, D. S
[1] Naval res. lab., electronics sci. technology div., Washington DC 20375-5000, United States - Source
Surface science. 1995, Vol 334, Num 1-3, pp 29-38 ; ref : 36 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition antimoine Défaut cristallin Dépendance température Effet concentration Etude expérimentale Matériau dopé Profil profondeur Silicium Ségrégation Si:Sb Si
- Keyword (en)
- Antimony additions Crystal defects Temperature dependence Quantity ratio Experimental study Doped materials Depth profiles Silicon Segregation
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3592483
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0039-6028(95)00435-1 
https://dx.doi.org/10.1016/0039-6028(95)00435-1
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