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Temperature-independent output voltage generated by threshold voltage of an NMOS transistor

Author
MANKU, T1 ; WANG, Y
[1] Tech. univ. Nova Scotia, Halifax NS B3J 2X4, Canada
Source

Electronics Letters. 1995, Vol 31, Num 12, pp 935-936 ; ref : 4 ref

CODEN
ELLEAK
ISSN
0013-5194
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institution of Electrical Engineers, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Canal n Caractéristique fonctionnement Circuit MOS Commande tension Référence tension Seuil tension Technologie MOS complémentaire Transistor MOS
Keyword (en)
n channel Performance characteristic MOS circuit Voltage control Voltage standard Voltage threshold Complementary MOS technology MOSFET devices
Keyword (es)
Canal n Característica funcionamiento Circuito MOS Estandar voltaje Umbral tensión Tecnología MOS complementario
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A8 Analog circuits

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3605161

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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