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Influence of FN electron injections in dry and dry/wet/dry gate oxides : relation with failure

Author
CIANTAR, E1 ; BOIVIN, P1 ; BURLE, M1 ; NIEL, C1 ; MORAGUES, J. M2 ; SAGNES, B2 ; JERISIAN, R2 ; OUALID, J2
[1] SGS-Thomson Microelectronics, 13790 Rousset, France
[2] ENSPM, lab. matériaux composants semiconducteurs, 13397 Marseille, France
Conference title
Amorphous Insulating Thin Films. Partie II
Conference name
Amorphous Insulating Thin Films. Symposium (2 ; Strasbourg 1994-05-24) = E-MRS Spring Meeting. Symposium A (Strasbourg 1994-05-24)
Author (monograph)
DEVINE, Rod A. B (Editor)1 ; WARREN, W. L (Editor); KANICKI, Jerzy (Editor); MATSUMARA, Masakiyo (Editor)
European Materials Research Society, Europe (Funder/Sponsor)
[1] CNS/CNET, Meylan, France
Source

Journal of non-crystalline solids. 1995, Vol 187, pp 144-148 ; ref : 10 ref

CODEN
JNCSBJ
ISSN
0022-3093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Capacité MOS Circuit intégré Essai Etude expérimentale Fiabilité Piégeage porteur charge Injection Fowler Nordheim Oxyde grille
Keyword (en)
MOS capacity Integrated circuits Testing Experimental study Reliability Charge carrier trapping Fowler-Nordheim injection Gate oxide
Keyword (es)
Capacidad MOS Estudio experimental Captura portador carga
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3630143

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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