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TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy

Author
NISSEN, H.-U; MÜLLER, E; DELLER, H. R; VON KÄNEL, H
ETH Zürich, Lab. Festkörperphysik, 8093 Zürich, Switzerland
Source

Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 395-406 ; ref : 27 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Composé binaire Couche mince Croissance cristalline en phase vapeur Epaisseur Epitaxie jet moléculaire Etude expérimentale Fer siliciure Mécanisme croissance Relation orientation Structure îlot TEM Fe Si FeSi2 Composé minéral Métal transition composé
Keyword (en)
Binary compounds Thin films Crystal growth from vapors Thickness Molecular beam epitaxy Experimental study Iron silicides Growth mechanism Orientation relation Island structure TEM Inorganic compounds Transition element compounds
Keyword (es)
Mecanismo crecimiento Relación orientación
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3646817

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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