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Surface damage produced by 20 keV Ga bombardment of Ge(001)

Author
BELLON, P2 ; CHEY, S. J; VAN NOSTRAND, J. E; GHALY, M; CAHILL, D. G; AVERBACK, R. S
Univ. Illinois, dep. materials sci. eng., Urbana IL 61801, United States
[2] CE Saclayh, SRMP, 91191 Gif-sur-Yvette, France
Source

Surface science. 1995, Vol 339, Num 1-2, pp 135-141 ; ref : 15 ref

CODEN
SUSCAS
ISSN
0039-6028
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier Science, Amsterdam / Elsevier Science, Lausanne / Elsevier Science, New York, NY
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Calcul dynamique moléculaire Effet physique rayonnement Endommagement surface Etude expérimentale Faisceau ion Germanium Matériau semiconducteur STM Ge
Keyword (en)
Molecular dynamics calculations Physical radiation effects Surface damage Experimental study Ion beams Germanium Semiconductor materials STM
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage / 001B60A80J Ion radiation effects

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Pacs
6180J Ion radiation effects

Pacs
6835B Surface structure and topography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3659065

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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