MWPACVD diamond homoepitaxial growth: role of the plasma and the substrate parameters
- Author
- FINDELING-DUFOUR, C; VIGNES, A; GICQUEL, A
CNRS-Univ. Paris Noed, lab. ing. matériaux hautes pressions, 93430 Villetaneuse, France - Conference title
- Diamond films'94. I
- Conference name
- European conference on diamond, diamond like and related materials (5 ; Il Ciocco 1994-09-25)
- Author (monograph)
- BACHMANN, Peter (Editor)1 ; BUCKLEY-GOLDER, Ian M (Editor); GLASS, Jeffrey T (Editor); KAMO, Mutzukazu (Editor)
[1] Philips Research Laboratories, 52066 Aachen, Germany - Source
Diamond and related materials. 1995, Vol 4, Num 4, pp 429-434 ; ref : 21 ref
- ISSN
- 0925-9635
- Scientific domain
- Crystallography
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- CVD Caractérisation Couche épitaxique Croissance cristalline en phase vapeur Diamant Etude expérimentale Homojonction Hyperfréquence Minéral synthétique Mode opératoire Morphologie Orientation cristalline Plasma Substrat Surface C PECVD Non métal
- Keyword (en)
- CVD Characterization Epitaxial layers Crystal growth from vapors Diamonds Experimental study Homojunctions Microwave radiation Synthetic mineral Operating mode Morphology Crystal orientation Plasma Substrates Surfaces PECVD Nonmetals
- Keyword (es)
- Caracterización Mineral sintético Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3706732
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0925-9635(94)05316-2 
https://dx.doi.org/10.1016/0925-9635(94)05316-2
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