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MPCVD diamond deposition on bias pretreated porous silicon

Author
SPITZL, R1 ; RAIKO, V1 ; HEIDERHOFF, R; GNASER, H; ENGEMANN, J1
[1] BUHG Wuppertal, Forschungszent. Mikrostukturtech., 42097 Wuppertal, Germany
Conference title
Diamond films'94. II
Conference name
European conference on diamond, diamond like and related materials (5 ; Il Ciocco 1994-09-25)
Author (monograph)
BACHMANN, Peter K (Editor)1 ; BUCKLEY-GOLDER, Ian M (Editor); GLASS, Jeffrey T (Editor); KAMO, Mutzukazu (Editor)
[1] Philips Research Laboratories, 52066 Aachen, Germany
Source

Diamond and related materials. 1995, Vol 4, Num 5-6, pp 563-568 ; ref : 22 ref

ISSN
0925-9635
Scientific domain
Crystallography
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
CVD Cathodoluminescence Croissance cristalline en phase vapeur Croissance film Diamant Etude expérimentale Germination cristalline Matériau poreux Plasma Prétraitement SIMS Spectre Raman Substrat Tension polarisation Traitement surface C Substat Si poreux Non métal
Keyword (en)
CVD Cathodoluminescence Crystal growth from vapors Film growth Diamonds Experimental study Crystal nucleation Porous materials Plasma Pretreatment SIMS Raman spectra Substrates Bias voltage Surface treatments Nonmetals
Keyword (es)
Germinación cristalina Pretratamiento Voltage polarización
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3707336

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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