Fabrication of low-threshold AlGaAs/GaAs patterned quantum well laser grown on Si substrate
- Author
- HASEGAWA, Y1 ; EGAWA, T; JIMBO, T; UMENO, M1
[1] Nagoya inst. technology, dep. electrical computer eng., Showa-ku, Nagoya 466, Japan - Source
Japanese journal of applied physics. 1993, Vol 32, Num 7B, pp L997-L999 ; 2 ; ref : 10 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Courant seuil Gallium arséniure Laser semiconducteur Puits quantique
- Keyword (en)
- Aluminium arsenides Threshold current Gallium arsenides Semiconductor lasers Quantum wells
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3753761
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.32.L997 
https://dx.doi.org/10.1143/JJAP.32.L997
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