Study of Co silicide formation by multiple implantation
- Author
- WITZMANN, A1 ; SCHIPPEL, S1 ; ZENTGRAF, A1 ; GAJDUK, P. I
[1] Friedrich-Schiller-Univ. Jena, Physikalisch-Astronomische Fak., Inst. Festkörperphysik, O-6900 Jena, Germany - Source
Journal of applied physics. 1993, Vol 73, Num 11, pp 7250-7260 ; 1 ; ref : 27 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cobalt siliciure Concentration impureté Domaine énergie 10-100 keV Dose rayonnement Etude expérimentale Implantation ion Implantation multiple Matériau semiconducteur Recuit thermique Réaction chimique Silicium Co Si CoSi2 Composé minéral Métal transition composé
- Keyword (en)
- Cobalt silicides Impurity density keV range 10-100 Radiation doses Experimental study Ion implantation Multiple implantation Semiconductor materials Thermal annealing Chemical reactions Silicon Inorganic compounds Transition element compounds
- Keyword (es)
- Concentración impureza Implantación múltiple Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3763445
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354013 
https://dx.doi.org/10.1063/1.354013
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