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Structural evaluation of epitaxially grown organic evaporated films by total reflection x-ray diffractometer

Author
ISHIDA, K; HAYASHI, K; YOSHIDA, Y; HORIUCHI, T; MATSUSHIGE, K
Kyushu univ., fac. eng., dep. applied sci., Higashi-ku, Fukuoka 812, Japan
Source

Journal of applied physics. 1993, Vol 73, Num 11, pp 7338-7343 ; 1 ; ref : 23 ref

CODEN
JAPIAU
ISSN
0021-8979
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
American Institute of Physics, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Couche mince Croissance cristalline Epitaxie Etude expérimentale Evaporation sous vide Hydrocarbure Orientation moléculaire Paraffine Réflexion Vieillissement XRD Composé organique
Keyword (en)
Thin films Crystal growth Epitaxy Experimental study Vacuum evaporation Hydrocarbons Molecular orientation Paraffin Reflection Aging XRD Organic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A10 X-ray diffraction and scattering / 001B60A10H X-ray absorption spectroscopy: exafs, nexafs, xanes, etc

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3763448

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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